Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Recessed oxide by localized oxidation
Patent
1996-09-06
2000-11-14
Fourson, George
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Recessed oxide by localized oxidation
H01L 21762
Patent
active
061469777
ABSTRACT:
A method for fabricating a semiconductor integrated circuit having MOS (Metal-Oxide-Semiconductor) transistors which do not produce increased leakage currents upon exposure to radiation and which are free of lateral diffusion of impurities from channel stopper layers. The method comprises the steps of (a) applying ions of an impurity of one conductivity type with a relatively high energy toward a central region of a field oxide film formed as a isolating region in a semiconductor substrate of the same conductivity type as the one conductivity type; and (b) applying ions of the impurity with a relatively low energy toward at least a peripheral region of the field oxide film.
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Fourson George
NEC Corporation
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