Method of manufacturing a quantum diffraction transistor

Details Method of manufacturing a quantum diffraction transistor Method of manufacturing a quantum diffraction transistor

1997-09-17

1999-08-17

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438167, 438962, H01L 21338

Patent

active

059406968

ABSTRACT:
The present invention discloses a technique for applying diffraction characteristics of electrons to a two-dimensional electronic device to manufacture multi-functional transistor having various ON/OFF states. Method of manufacturing a quantum diffraction transistor according to the present invention is capable of adjusting the amplitude of drain current and having various ON/OFF states utilizing diffraction characteristics of electrons by interposing a reflection-type diffraction grating in a bent electron path. In the inventive multi-functional quantum diffraction transistor using a two dimensional electron gas in quantum well structure formed at a different species junction in a heterostructure semiconductor device and having a bent electron path between the source electrode and the drain electrode with a reflection-type diffraction grating, the quantum diffraction effect of the electrons is used for the control of the diffracted drain current.

REFERENCES:
patent: 4962410 (1990-10-01), Kriman et al.
patent: 5191216 (1993-03-01), Henderson et al.
Leburton et al., Tunable negative differential resistance in anti-dot diffraction field effect ransistors, Appl. Phys. Lett. 70 (5), pp. 634-636, Feb. 1997.
Park et al., Electron diffraction due to a reflection grating in a conducting wire, Appl. Phys. Lett. 71 (24), pp. 3555-3557, Dec. 1997.

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