Method of manufacturing a polysilicon film of a semiconductor de

Details Method of manufacturing a polysilicon film of a semiconductor de Method of manufacturing a polysilicon film of a semiconductor de

1996-10-07

1999-04-13

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438482, 438592, 438657, 438660, H01L 21326

Patent

active

058937471

ABSTRACT:
The present invention relates to a method of manufacturing a polysilicon film having a grain size of 0.5 .mu.m or more by forming a nucleus site of low density at low temperature of about 450.degree. C. with Si.sub.2 H.sub.6 gas, by growing an amorphous silicon film to some degree with the nucleus site, forming an amorphous silicon film of a device to a desired thickness by carrying out a main deposition process at the temperature of 500 through 600.degree. C. with SiH.sub.4 or SiH.sub.4 containing a small amount of impurity, and carrying out a heat treatment process for a long period at the temperature range of 600 through 700.degree. C. with N.sub.2 gas.

REFERENCES:
patent: 5024972 (1991-06-01), DePinto et al.
patent: 5147820 (1992-09-01), Chittipeddi et al.
patent: 5652156 (1997-07-01), Liao et al.
patent: 5712181 (1998-01-01), Byun et al.

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