Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Patent
1995-05-09
1997-04-08
Niebling, John
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
438595, 438655, 438664, H01L 2128
Patent
active
056187556
ABSTRACT:
In a method of the invention, a semiconductor device is manufactured. A partially poly-crystalline silicon thin film is formed on a substrate by a CVD method at a film formation temperature of 550.degree. C. or lower by using a source gas containing silane. Then, a metal silicide film is formed on the silicon thin film at a film formation temperature of 500.degree. C. or lower to form a film lamination. After patterning and etching the film lamination, the film lamination is heat treated and simultaneously crystallized to integrally bond the film lamination.
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patent: 5510296 (1996-04-01), Yen et al.
Bilodeau Thomas G.
Fuji Electric & Co., Ltd.
Niebling John
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