Method of manufacturing a perovskite thin film dielectric

Details Method of manufacturing a perovskite thin film dielectric Method of manufacturing a perovskite thin film dielectric

1995-09-11

1997-04-08

Kunemund, Robert

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

427226, 4271263, H01L 2102

Patent

active

056187610

ABSTRACT:
Disclosed is a method of manufacturing a semiconductor device, comprising the step of forming a dielectric thin film on a semiconductor layer, the dielectric thin film being made of a compound represented by the general formula (1) given below:

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patent: 5434742 (1995-07-01), Saito et al.
patent: 5442585 (1995-08-01), Eguchi et al.
Takaaki Kawahara et al., Step Coverage and Electrical Properties of (Ba, Sr)TiO.sub.3 Films Prepared by Liquid Source Chemical Vapor Deposition Using TiO(DPM).sub.2 ; Jpn. J. Appl. Phys. vol. 33 (1994) pp. 5129-5134 Part 1, No. 9B, Sep. 1994.
Jiming Zhang et al., Photoenhanced Chemical-Vapor Deposition of BaTiO.sub.3 ; Appl. Phys. Lett. 65 (19), Nov. 7, 1994, pp. 2410-2412.

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