Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-05-02
2010-02-16
Menz, Laura M (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S324000, C257S365000
Reexamination Certificate
active
07663176
ABSTRACT:
For enhancing the high performance of a non-volatile semiconductor memory device having an MONOS type transistor, a non-volatile semiconductor memory device is provided with MONOS type transistors having improved performance in which the memory cell of an MONOS non-volatile memory comprises a control transistor and a memory transistor. A control gate of the control transistor comprises an n-type polycrystal silicon film and is formed over a gate insulative film comprising a silicon oxide film. A memory gate of the memory transistor comprises an n-type polycrystal silicon film and is disposed on one of the side walls of the control gate. The memory gate comprises a doped polycrystal silicon film with a sheet resistance lower than that of the control gate comprising a polycrystal silicon film formed by ion implantation of impurities to the undoped silicon film.
REFERENCES:
patent: 5838041 (1998-11-01), Sakagami et al.
patent: 5969383 (1999-10-01), Chang et al.
patent: 6255166 (2001-07-01), Ogura et al.
patent: 6528839 (2003-03-01), Shukuri et al.
patent: 6545311 (2003-04-01), Shukuri et al.
patent: 6614684 (2003-09-01), Shukuri et al.
patent: 6706579 (2004-03-01), Kasuya
patent: 6906954 (2005-06-01), Shukuri et al.
patent: 7042764 (2006-05-01), Shukuri et al.
patent: 7289361 (2007-10-01), Shukuri et al.
patent: 7371631 (2008-05-01), Sakai et al.
patent: 7428167 (2008-09-01), Shukuri et al.
patent: 7463517 (2008-12-01), Shukuri et al.
patent: 2002/0006054 (2002-01-01), Shukuri et al.
patent: 2003/0198086 (2003-10-01), Shukuri
patent: 2004/0004894 (2004-01-01), Shukuri et al.
patent: 2004/0119107 (2004-06-01), Hisamoto et al.
patent: 2004/0155234 (2004-08-01), Ishimaru et al.
patent: 2004/0185617 (2004-09-01), Shukuri
patent: 2004/0190339 (2004-09-01), Shukuri et al.
patent: 2006/0003508 (2006-01-01), Sakai et al.
patent: 2006/0202274 (2006-09-01), Shukuri et al.
patent: 2006/0221688 (2006-10-01), Shukuri et al.
patent: 2008/0203466 (2008-08-01), Sakai et al.
patent: 2008/0206975 (2008-08-01), Sakai et al.
patent: 1416540 (2004-05-01), None
patent: 2001-102466 (2001-04-01), None
Ishii Yasushi
Machida Satoru
Matsui Toshikazu
Nakagawa Munekatsu
Nakamichi Masaru
Antonelli, Terry Stout & Kraus, LLP.
Menz Laura M
Renesas Technology Corp.
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