Method of manufacturing a nanowire device

Details Method of manufacturing a nanowire device Method of manufacturing a nanowire device

2006-09-21

2011-12-20

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

C438S128000, C438S131000, C438S800000, C257SE51040, C216S002000

Reexamination Certificate

active

08080481

ABSTRACT:
The present invention provides a method for manufacturing a semiconductor nanowire device in mass production at a low cost without an additional complex nanowire alignment process or SOI substrate by forming a single crystal silicon nanowire with a simple process without forming an ultra fine pattern using an electron beam and transferring the nanowire separated from the substrate to another oxidation layer or insulation substrate. And also, the present invention suggests a method for simply manufacturing a nanowire device transferring the nanowire from a semiconductor substrate formed thereon the nanowire to another substrate formed thereon an insulation layer or the like.

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patent: 2007/0120273 (2007-05-01), Eckstein et al.
patent: WO 2005076679 (2005-08-01), None

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