Method of manufacturing a nano structure by etching, using a...

Details Method of manufacturing a nano structure by etching, using a... Method of manufacturing a nano structure by etching, using a...

2010-09-13

2011-12-27

Nguyen, Cuong Q (Department: 2811)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S702000, C438S706000

Reexamination Certificate

active

08084365

ABSTRACT:
A method of manufacturing a nano structure by etching, using a substrate containing Si. A focused Ga ion or In ion beam is irradiated on the surface of the substrate containing Si. The Ga ions or the In ions are injected while sputtering away the surface of the substrate so that a layer containing Ga or In is formed on the surface of the substrate. Dry etching by a gas containing fluorine (F) is performed with the layer containing the Ga or the In formed on the surface of the substrate taken as an etching mask, and the nano structure is formed having a pattern of at least 2 μm tin in depth according to a predetermined line width.

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