Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2007-03-27
2007-03-27
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S647000, C438S639000, C257SE27084
Reexamination Certificate
active
10989530
ABSTRACT:
A method of manufacturing a memory device addressing reliability and refresh characteristics through the use of a multilayered doped conductor, and a method making is described. The multilayered doped conductor creates a high dopant concentration in the active area close to the channel region. The rich dopant layer created by the multilayered doped conductor is less susceptible to depletion from trapped charges in the oxide. This improves device reliability at burn-in and lowers junction leakage, thereby providing a longer period between refresh cycles.
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Dinsmore & Shohl LLP
Geyer Scott B.
Micro)n Technology, Inc.
Ullah Elias
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