Method of manufacturing a mask support of SiC for radiation lith

Details Method of manufacturing a mask support of SiC for radiation lith Method of manufacturing a mask support of SiC for radiation lith

1989-12-04

1991-02-19

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156633, 156647, 156652, 156657, 1566591, 156662, H01L 21306, B44C 122, C23F 102, C03C 1500

Patent

active

049941410

ABSTRACT:
The invention relates to a method of manufacturing a mask support (diaphragm) of SiC for radiation lithography masks, in which an SiC layer is deposited at least on one of the two major surfaces of a substrate in the form of a silicon single crystal wafer and the silicon single crystal wafer is removed except at an edge region by means of a selective etching step, the mask support being annealed before or after the selective etching step in an oxidizing atmosphere at a temperature in the range of 200.degree. to 1350.degree. C. for a duration of 2 to 10 h.

REFERENCES:
patent: 4668336 (1987-05-01), Shimkunas
patent: 4680243 (1987-07-01), Shimkunas et al.

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