Method of manufacturing a mask for radiation lithography

Details Method of manufacturing a mask for radiation lithography Method of manufacturing a mask for radiation lithography

1988-08-31

1990-08-07

Dees, Jose

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

20419215, 20419228, 378 35, G03F 100

Patent

active

049467514

ABSTRACT:
A method is set forth of manufacturing a mask for radiation lithography having a mask support and a substrate, on which an absorber layer is provided to be structured according to a desired mask pattern. The absorber layer having a thickness preferably in the range of from 0.2 to 1.2 .mu.m of partly oxidized tungsten having an oxygen content in the range of from 21 to 29 at. % in the layer is deposited on the substrate, preferably by means of cathode sputtering.

REFERENCES:
patent: 4218503 (1980-08-01), Reekstin et al.
patent: 4719161 (1988-01-01), Kimura et al.
Munz et al., "Reactive High Rate Sputtering of Oxides", Thin Solid Films, 86 (1981) pp. 175-181.

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