Method of manufacturing a liquid crystal display device

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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Details

C438S030000, C349S043000

Reexamination Certificate

active

11411137

ABSTRACT:
Disclosed is a photoresist film which is formed in a manner of covering at least a source electrode, a source line, a pixel electrode, a drain electrode, a drain line, a semiconductor film and a protective film, and further covering a gate insulting film in their vicinities. Moreover, wet and dry etchings are sequentially performed by using the photoresist film as a mask. Due to this etching, a residual pattern existing on the gate insulating film is etched.

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patent: 6204082 (2001-03-01), Hwang
patent: 2002/0009835 (2002-01-01), Chen et al.
patent: 2002-318393 (2002-10-01), None
patent: 2004-070182 (2004-03-01), None

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