Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-11-27
2007-11-27
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S030000, C349S043000
Reexamination Certificate
active
11411137
ABSTRACT:
Disclosed is a photoresist film which is formed in a manner of covering at least a source electrode, a source line, a pixel electrode, a drain electrode, a drain line, a semiconductor film and a protective film, and further covering a gate insulting film in their vicinities. Moreover, wet and dry etchings are sequentially performed by using the photoresist film as a mask. Due to this etching, a residual pattern existing on the gate insulating film is etched.
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Horinouchi Makoto
Motoshima Hideto
Nishimoto Junji
Shimodozono Hisanobu
Sonohata Shouichi
NEC LCD Technologies. Ltd.
Prasad Neil
Smith Zandra V.
Young & Thompson
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