Method of manufacturing a glass passivation type semiconductor d

Details Method of manufacturing a glass passivation type semiconductor d Method of manufacturing a glass passivation type semiconductor d

1985-10-17

1986-12-30

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29576W, 29580, 156657, 156662, 156663, 156648, 357 50, 427 93, 427272, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

046327282

ABSTRACT:
In a method of manufacturing a glass passivation type semiconductor device wherein a silicon semiconductor substrate of a first conductivity type is formed with a p-n junction by diffusing an impurity of a second conductivity type thereinto, recesses which reach the p-n junction are provided to expose the p-n junction in the recesses, and the exposed parts of the p-n junction are covered with a low-melting glass; a method of manufacturing a glass passivation type semiconductor device according to this invention consists in that, using a printing mask, a glass is deposited on a whole surface of a wafer except for an outer periphery of the wafer or predetermined parts thereof necessary for alingment at a subsequent step, with the glass films at the bottoms of said recesses and the p-n junction parts being rendered at least 10 .mu.m thick and glass films at the other parts being rendered 4-10 .mu.m thick, and that unnecessary portions of said glass films are thereafter removed by etching, using a photoresist as a mask.

REFERENCES:
patent: 3847687 (1974-11-01), Davidsohn
patent: 4104086 (1978-08-01), Bondur et al.

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