Method of manufacturing a glass-covered semiconductor device

Details Method of manufacturing a glass-covered semiconductor device Method of manufacturing a glass-covered semiconductor device

1997-12-22

1999-08-31

Chaudhari, Chandra

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth step with preceding and subsequent diverse...

438505, 438508, 257794, H01L 2900

Patent

active

059465867

ABSTRACT:
A method of manufacturing a semiconductor device, in which a pn-junction (2) is provided in a semiconductor wafer (1) of a first conduction type by providing doping atoms of a second conduction type, which is opposed to the first conduction type, via a first main face (3) of the main faces (3, 5) of the wafer (1), subdividing said wafer (1) into individual semiconductor bodies (10) having a pn-junction (2) between and substantially parallel to two opposing connection faces (3, 5), connecting said connection faces (3, 5) to connection bodies (11, 12) by means of a connection layer (15) and covering the semiconductor bodies (10) with a glass (20) A glass-covered semiconductor device is also described. After the pn-junction (2) has been provided on the first main face (3) of the semiconductor wafer (1), a monocrystalline silicon layer (7) having atoms of the second conduction type is epitaxially provided, whereafter the wafer (1) is subdivided into semiconductor bodies (10). By virtue thereof, the percentage of rejects during the manufacturing process is substantially reduced.

REFERENCES:
patent: 5760482 (1998-06-01), Van Aken

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