Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-06-21
2005-06-21
Lebentritt, Michael S. (Department: 2824)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S003000, C257S295000
Reexamination Certificate
active
06908867
ABSTRACT:
There are contained the steps of forming sequentially a first conductive film, a dielectric film, and a second conductive film on a first insulating film, forming an upper electrode of a capacitor by patterning the second conductive film, patterning the dielectric film to leave under the upper electrode, forming a lower electrode of the capacitor by patterning the first conductive film, covering the capacitor and the first insulating film with a second insulating film, and annealing at least one of the first insulating film and the second insulating film in an inert-gas atmosphere and then exposing the film to an N2O plasma.
REFERENCES:
patent: 5990513 (1999-11-01), Perino et al.
patent: 6436850 (2002-08-01), Morales
patent: 6509593 (2003-01-01), Inoue et al.
patent: 6635528 (2003-10-01), Gilbert et al.
patent: 2001/0002273 (2001-05-01), Joshi et al.
patent: 1 061 573 (2000-12-01), None
patent: 1 189 262 (2002-03-01), None
patent: 2001-60669 (2001-03-01), None
patent: 2002-9256 (2002-01-01), None
patent: 2002-94021 (2002-03-01), None
Yang et al., Hydrogen barriers for SrBi2Ta2O9-based ferroelectric memories,Appl. Phys. Lett., 77 (Aug. 2000) 1372.
Yang et al., Highly reliable ferroelectric memories using BLT thin films and robust integration schemes,IEEE Electron Device Lett., 23 (Dec. 2002) 743.
Fujitsu Limited
Lebentritt Michael S.
Westerman Hattori Daniels & Adrian LLP
Wilson Christian D.
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