Method of manufacturing a diffraction grating for a semiconducto

Details Method of manufacturing a diffraction grating for a semiconducto Method of manufacturing a diffraction grating for a semiconducto

1990-08-17

1993-08-24

McCamish, Marion E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making named article

430323, 430329, 430396, 359566, 359569, 359577, G03C 500, G02B 518

Patent

active

052387852

ABSTRACT:
A method for manufacturing a diffraction grating includes applying a resist, the developing speed of which has an extreme at a certain exposure intensity, to a substrate on which the diffraction grating is to be formed, performing interference exposure of the resist with maximum and minimum values of exposure intensity respectively larger and smaller than the intensity which makes the developing speed an extreme, developing the resist, and etching the substrate using the remaining resist as a mask.

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patent: 5004673 (1991-04-01), Vlannes
".lambda./4 Shift Diffraction Grating Using Novolak Series Negative/Positive Resist", 2a-N-9, Prescript of Autumn Meeting, 1985, Japanese Association of Applied Physics.
"Production of .lambda./4 Shift Diffraction Grating Using Phase Shift Film", 29p-T-8, Prescript of Autumn Meeting, 1986, Japanese Association of Applied Physics.
"20-DFB Laser Arrays Fabricated by SOR Lithography", IOOC 1989, 21D3-1, Nakao et al.
Streifer et al., "Coupling Coefficients For Distributed Feedback Single- and Double-Heterostructure Diode Lasers", IEEE Journal of Quantum Electronics, vol. QE-11, 1975, pp. 867-873.
Johnson, "Optical Writing Of Dense 1000-.ANG. Features In Photoresists", Applied Optics, vol. 21, No. 11, 1982, p. 1892.

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