Method of manufacturing a dielectric film in a capacitor

Details Method of manufacturing a dielectric film in a capacitor Method of manufacturing a dielectric film in a capacitor

2006-10-10

2008-09-16

Nhu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Insulating material

C257S306000, C257S310000, C257SE21489, C257SE21547, C257SE21647

Reexamination Certificate

active

07425761

ABSTRACT:
A method of manufacturing a dielectric layer for a capacitor including sequentially supplying and purging a first and a second precursor material for a first and a second predetermined amount of time, respectively, in an initial cycle, sequentially supplying and purging the first and the second precursor materials for a third predetermined amount of time, which is shorter than the first and/or second predetermined amount of time, in a post cycle, which follows the initial cycle, and repeating the initial and post cycles to form a dielectric layer having a predetermined thickness.

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patent: 2002/0160559 (2002-10-01), Lee et al.
patent: 2006/0172498 (2006-08-01), Yamaguchi et al.
patent: 2004-023043 (2004-01-01), None
patent: 2004-0058709 (2004-07-01), None
patent: 2005-0067490 (2005-07-01), None

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