Method of manufacturing a crystalline semiconductor

Details Method of manufacturing a crystalline semiconductor Method of manufacturing a crystalline semiconductor

1997-10-31

2000-02-22

Bowers, Charles

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

438487, 438166, 438164, H01L 2120, H01L 2136, H01L 2100, H01L 2184

Patent

active

060279877

ABSTRACT:
A silicon oxide film is used as a mask covering an amorphous silicon film. A film having a catalyst element such as nickel for promoting crystallization is formed. When heat annealing is applied, the catalyst element diffuses from the aperture into the amorphous silicon film to obtain a crystalline silicon film. The silicon film has uniformly orientated crystals. Then, a halogen-containing gas (for example, hydrogen chloride) is introduced while the mask in place. In this step, the atmosphere and the temperature are controlled to form, on the silicon film in the portion of the aperture, an oxide film of such a thickness as allowing the catalyst element to pass but not etching the silicon film. The catalyst element in the silicon film is removed by halogen through the aperture, but the crystallinity of silicon does not change. Thus, a silicon film of good crystallinity can be obtained.

REFERENCES:
patent: 5643826 (1997-07-01), Ohtani
patent: 5654203 (1997-08-01), Ohtani
patent: 5693541 (1997-12-01), Yamazaki
patent: 5869363 (1999-02-01), Yamazaki
patent: 5894137 (1999-04-01), Yamazaki

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