Method of manufacturing a crown shape capacitor

Details Method of manufacturing a crown shape capacitor Method of manufacturing a crown shape capacitor

1996-05-03

1999-08-03

Mach, D. Margaret M.

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 72, 438243, 438386, 438706, H01L 2170, H01L 2700

Patent

active

059321156

ABSTRACT:
The present invention is a method of manufacturing crown shape capacitors for use in DRAM semiconductor memory. The method includes the steps of forming a first polysilicon layer, patterning a photoresist on the first polysilicon layer, etching the first polysilicon layer, using oxygen plasma to strip the photoresist, forming a side wall polymer onto the side walls of the first polysilicon layer, using the side wall polymer as a mask to etch back the first polysilicon layer to form a crown shape structure, removing the side wall polymer, depositing a dielectric layer onto the first polysilicon layer, and depositing a second polysilicon layer onto the dielectric layer.

REFERENCES:
patent: 4225945 (1980-09-01), Kuo
patent: 5374580 (1994-12-01), Baglee
CAPLUS 1996:637535, 1996.
WPIDS 96-159702, 1996.
WPIDS 97-384188, 1997.
WPIDS 97-434399, 1997.
INSPEC 94:4712575, 1994.

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