Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-02-21
2000-03-21
Quach, T. N.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438629, 438639, 438738, H01L 2128
Patent
active
060402423
ABSTRACT:
There is provided a method of manufacturing a semiconductor device, comprising steps of forming an insulating film on a semiconductor substrate; forming a first film of a first material to cover the insulating film; forming a contact-hole through the insulating film and the first film so that the semiconductor substrate is exposed in a bottom of the contact hole; forming a second film of a second material to fill the contact hole and cover the first film; and, removing the first film and the second film in an area other than the contact hole, wherein the first film is etched at a greater etching rate than that of the second film to form a buried contact plug comprising a part of the second film. The semiconductor device thus obtained has no plug loss. The use of a spacer layer to form a contact hoe by selective etching is also shown.
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patent: 5587338 (1996-12-01), Tseng
patent: 5786637 (1998-07-01), Tabara
Wolf, S., Silicon Processing for the VLSI Era, vol. 1, 1986, Lattice Press, pp. 555-557, 581-582.
NEC Corporation
Quach T. N.
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