Method of manufacturing a composite structure for use in electro

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead

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257692, H01L 2304

Patent

active

056613415

ABSTRACT:
A method for manufacturing of a composite microelectronic structure with improved planarity of layers thereof.
The method comprises masking of selected portion of electrically conductive layers with subsequent selective electrochemical anodic oxidation thereof and removing the mask.
A composite structure, in particular MCM-D's manufactured by this method has improved connectivity density and performances.

REFERENCES:
patent: 5055907 (1991-10-01), Jacobs
patent: 5198693 (1993-03-01), Imken et al.
patent: 5463250 (1995-10-01), Nguyen et al.
patent: 5508556 (1996-04-01), Lin
International Search Report PCT/GB95/01630 dated 4 Oct. 1995.

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