Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1998-12-18
2000-08-29
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419216, C23C 1435
Patent
active
061103292
ABSTRACT:
In a method of manufacturing a composite material structure consisting of a substrate with a layer of essentially pure sp.sup.2 - and sp.sup.3 -hybridized carbon with a sp.sup.3 -hybridized carbon proportion which increases toward the surface of the carbon layer, the carbon layer is deposited on the substrate by a PVD process using a magnetron sputtering apparatus in a process chamber in which an argon partial pressure of 0.6 to 1.0 pa is maintained and, during the carbon deposition, a bias voltage is maintained which is increased with increasing thickness of the layer from 0 to 300 volts.
REFERENCES:
patent: 4822466 (1989-04-01), Rabalais et al.
patent: 5178739 (1993-01-01), Barnes et al.
Holmberg et al., "Tribological Characteristics of Hydrogenated and Hydrogen-free Diamond-like Carbon Coatings", Diamond Films and Technology, vol. 4, No. 2.
Holleck Helmut
Stuber Michael
Bach Klaus J.
Forschungszentrum Karlsruhe GmbH
Nguyen Nam
VerSteeg Steven H.
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