Method of manufacturing a CMOS image sensor

Details Method of manufacturing a CMOS image sensor Method of manufacturing a CMOS image sensor

2006-08-22

2006-08-22

McPherson, John A. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making named article

C430S330000

Reexamination Certificate

active

07094519

ABSTRACT:
A method of manufacturing a CMOS image sensor. The present invention enables forming micro-lenses having a uniform shape throughout a semiconductor substrate. The method of manufacturing a CMOS image sensor includes: coating a color filter layer and a semiconductor substrate with a first photoresist; selectively exposing the first photoresist to light to define a planarization layer; coating the first photoresist with a second photoresist; selectively exposing the second photoresist to define a plurality of micro-lens bodies; and baking the plurality of micro-lens bodies to form a plurality of micro-lenses.

REFERENCES:
patent: 5316640 (1994-05-01), Wakabayashi et al.
patent: 5841126 (1998-11-01), Fossum et al.
patent: 5853960 (1998-12-01), Tran et al.
patent: 5886659 (1999-03-01), Pain et al.
patent: 5976907 (1999-11-01), Shigeta et al.
patent: 5990506 (1999-11-01), Fossum et al.
patent: 6005619 (1999-12-01), Fossum
patent: 6021172 (2000-02-01), Fossum et al.
patent: 6861207 (2005-03-01), Hsu et al.
patent: 8-335686 (1988-12-01), None
patent: 6-349728 (1994-12-01), None
patent: 2002-178156 (2002-08-01), None
Shunjl Horiuchi; Method for Manufacturing Solid-State Image Pickup Element; Patent Abstracts of Japan, Publication No. 2002-176156; Jun. 21, 2002; Japan Patent Office, Japan.
Ho Hak Chol, Jin Sub Shim, and Kwang Bok Song; Color Solid-State Image-Pickup Element and Manufacture Thereof; Patent Abstracts of Japan, Publication No. 08-335688, Dec. 17, 1996; Japan Patent Office, Japan.
Shinji Michihashi; Formation of Resist Pattern; Patent Abstracts of Japan, Publication No., 06-349728; Dec. 22, 1994; Japan Patent Office, Japan.

Affiliated with

Also associated with

Rating

Method of manufacturing a CMOS image sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a CMOS image sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a CMOS image sensor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3689570