Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Having heterojunction
Patent
1996-07-22
2000-08-01
Picardat, Kevin M.
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Having heterojunction
438925, H01L 21331
Patent
active
060966173
ABSTRACT:
A compound semiconductor device is manufactured by forming a carbon-doped compound semiconductor device at a predetermined growth temperature on a compound semiconductor substrate, stopping the growth and changing the growth temperature of the compound semiconductor layer, including the carbon-doped compound semiconductor layer, to a predetermined temperature under an atmosphere comprising an alkylarsine, thereby avoiding the formation of free atomic hydrogen and preventing hydrogen contamination of the C-doped compound semiconductor layer. As a result, the amount of coupling between hydrogen and carbon in the carbon-doped compound semiconductor layer is significantly reduced, thereby preventing lowering of the carbon carrier concentration. The present method enables formation of a C-doped GaAs base layer without deterioration of electrical characteristics, and formation of a laser having a second clad layer of C-doped compound semiconductor layer with improved reliability.
REFERENCES:
patent: 5244829 (1993-09-01), Kim
patent: 5385864 (1995-01-01), Kawasaki et al.
patent: 5491106 (1996-02-01), Seki et al.
patent: 5498568 (1996-03-01), Hosoba et al.
"Effect of post-growth cooling ambient on acceptor passivation in carbon in carbon-doped GaAs grown by metalorganic chemical vapor deposition", Stockman et al., Appl. Phys. Lett., vol. 62, No. 11, Mar. 15, 1993, pp. 1248-1250.
R. B. Bylsma, et al: "Carbon-doped Impurity Induced Layer Disorder 0.98 pm Lasers", The Journal of Applied Physics, 76, Jul. 1, 1994, pp. 590-592.
Noriyuki WATANABE, et al: "Carbon Doping in GaAs Using Trimethylarsine by Metaloganic Chemical Vapor Deposition with High-Speed Rotating Susceptor", The Journal of Crystal Growth, 147, 1995, pp. 256-263.
Hiroshi Fushimi, et al: "The Presence of Isolated Hydrogen Donors in Heavily Carbon-Doped GaAs", The Journal of Crystal Growth, 145, 1994, pp. 420-426.
The 42nd Applied Physics Association Lecture Meeting (1995), 1226.
Hiroki Kohda, et al: "A New Model for Carbon Doping in GaAs --Effect of the Methyl Radical", The Journal of Crystal Growth, 135, 1994, pp. 629-632.
Mitsubishi Denki & Kabushiki Kaisha
Picardat Kevin M.
LandOfFree
Method of manufacturing a carbon-doped compound semiconductor la does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a carbon-doped compound semiconductor la, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a carbon-doped compound semiconductor la will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-663227