Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Patent
1997-10-15
1999-10-19
Tsai, Jey
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
438253, 438648, H01L 218242
Patent
active
059703091
ABSTRACT:
A method of manufacturing a semiconductor capacitor electrode by growing a metal compound layer over polysilicon storage nodes. The metal compound layer readily growing on the polysilicon storage nodes, but not on portions of an insulating layer between adjacent polysilicon storage nodes.
REFERENCES:
patent: 5037775 (1991-08-01), Reisman
patent: 5079670 (1992-01-01), Tigelaar et al.
patent: 5418180 (1995-05-01), Brown
patent: 5506166 (1996-04-01), Sandhu et al.
patent: 5585300 (1996-12-01), Summerfelt
Ha Jung-min
Ko Dae-hong
Lee Sang-in
Park Byung-lyul
Samsung Electronics Co,. Ltd.
Tsai Jey
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