Method of manufacturing a bump electrode

Details Method of manufacturing a bump electrode Method of manufacturing a bump electrode

1992-06-29

1994-05-10

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437189, 437192, 437194, H01L 2128, H01L 21447, H01L 2192

Patent

active

053106997

ABSTRACT:
A method of manufacturing a semiconductor device with a bump-electrode of gold crystal is disclosed. The method includes providing a semiconductor substrate, an insulative layer, an electrode section, passivation layer on the edge portion of the electrode section, a multi-layer film, and a bump electrode of gold crystal. The method further includes heat treatment of the bump electrode to form an anticorrosive layer between the electrode section and the lower layer of the multi-layer film. Removing the unnecessary multi-layer film, the anticorrosive layer is used as a mask for etching to simplify the process of manufacturing the semiconductor device.

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