Etching a substrate: processes – Etching of semiconductor material to produce an article...
Patent
1997-12-29
2000-08-29
Powell, William
Etching a substrate: processes
Etching of semiconductor material to produce an article...
216 33, 216 38, 216 52, 216 88, 438690, 438692, H01L 2100, B44C 122
Patent
active
061103918
ABSTRACT:
A method of manufacturing a bonding substrate is disclosed. An oxide film is formed on at least one of two semiconductor substrates, and the two substrates are brought into close contact with each other via the oxide film. The substrates are heat-treated in an oxidizing atmosphere in order to firmly join the substrates together. Subsequently, the peripheral portion of a device-fabricating substrate is ground to a predetermined thickness, and an unjoined portion at the periphery of the device-fabricating substrate is completely removed through etching. The device-fabricating substrate is then ground and/or polished in order to reduce the thickness of the device-fabricating substrate to a desired thickness. The step of grinding the peripheral portion of the device-fabricating substrate to a predetermined thickness is performed by relative and radial movement of a grinding stone from the peripheral portion of the substrate toward the center thereof. The method enables grinding of a peripheral portion of the device-fabricating substrate for the purpose of removing an unjoined portion such that the device-fabricating substrate is ground to as small a thickness as possible in order to increase productivity while reducing costs. The method also prevents damage from reaching the support substrate even when the device-fabricating substrate is ground to such a small thickness.
REFERENCES:
patent: 5494849 (1996-02-01), Iyer et al.
patent: 5863829 (1999-01-01), Nakayoshi et al.
Nakamura Susumu
Nakazawa Kazushi
Takei Tokio
Powell William
Shin-Etsu Handotai & Co., Ltd.
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