Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Having heterojunction
Reexamination Certificate
2007-06-05
2007-06-05
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Having heterojunction
C438S170000, C438S202000, C438S234000, C438S309000
Reexamination Certificate
active
11091950
ABSTRACT:
A method forms a bipolar transistor in a semiconductor substrate of a first conductivity type. The method includes: forming on the substrate a single-crystal silicon-germanium layer; forming a heavily-doped single-crystal silicon layer of a second conductivity type; forming a silicon oxide layer; opening a window in the silicon oxide and silicon layers; forming on the walls of the window a silicon nitride spacer; removing the silicon-germanium layer from the bottom of the window; forming in the cavity resulting from the previous removal a heavily-doped single-crystal semiconductor layer of the second conductivity type; and forming in said window the emitter of the transistor.
REFERENCES:
patent: 5331199 (1994-07-01), Chu et al.
patent: 5599723 (1997-02-01), Sato
patent: 6177717 (2001-01-01), Chantre et al.
patent: 6271144 (2001-08-01), Monget et al.
patent: 6709941 (2004-03-01), Fujimaki
patent: 2002/0168868 (2002-11-01), Todd
patent: 2004/0195655 (2004-10-01), Ohnishi et al.
patent: 2005/0151165 (2005-07-01), Chan et al.
patent: 101 04 776 (2002-08-01), None
patent: 1 282 172 (2003-02-01), None
patent: 2 805 924 (2001-09-01), None
patent: WO 03/049192 (2003-06-01), None
Shang, L., et al., “The Development of an Anisotropic Si Etch Process Selective to GexSi1−xUnderlayers,”Journal of the Electrochemical Society 141(2):507-510, Feb. 1994.
Tillack, B., et al., “Monitoring of Deposition and Dry Etching of Si/SiGe Multiple Stacks,”Journal of Vacuum Science and Technology 14(1):102-105, Part B, Jan./Feb. 1996.
Chantre Alain
Chevalier Pascal
Iannucci Robert
Jorgenson Lisa K.
Le Thao P.
Seed IP Law Group PLLC
STMicroelectronics SA
LandOfFree
Method of manufacturing a bipolar transistor with a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a bipolar transistor with a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a bipolar transistor with a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3828407