Method of manufacturing a bipolar transistor having polysilicon

Details Method of manufacturing a bipolar transistor having polysilicon Method of manufacturing a bipolar transistor having polysilicon

1991-05-24

1992-08-11

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 24, 437186, 437980, 148DIG10, H01L 21265, H01L 2973

Patent

active

051378396

ABSTRACT:
In a bipolar transistor, a polysilicon layer formed on an emitter diffusion layer is used as an emitter electrode. After the polysilicon layer is formed, an atom is introduced into the polysilicon layer. A thermal treatment is then performed, and the atom is combined with a dangling bond of a silicon atom existing on a crystal grain interface of the polysilicon layer, thereby passivating the dangling bond of the silicon atom.

REFERENCES:
patent: 4613382 (1988-09-01), Katayama et al.
patent: 4978630 (1990-12-01), Kim
patent: 4992840 (1991-02-01), Haddad et al.
IEEE Transactions on Electron Devices, vol. ED-33. No. 11, Nov. 1986, pp. 1754 to 1768, Gary L. Patton et al.

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