Method of manufacturing a bipolar transistor and its emitter con

Details Method of manufacturing a bipolar transistor and its emitter con Method of manufacturing a bipolar transistor and its emitter con

1998-04-14

2000-06-06

Niebling, John F.

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Self-aligned

438369, 438942, H01L 21331

Patent

active

060717866

ABSTRACT:
A method of manufacturing a bipolar transistor in an integrated circuit including the steps of forming a P-type base area, coating this base area with an isolating layer, and forming an opening in the isolating layer at a location where it is desired to form the emitter region. The method further includes coating the structure with an N-type doped polysilicon layer, etching the polysilicon layer to delimit a portion therefrom, forming spacers at a periphery of the polysilicon portion, and implanting a P-type dopant to form a base contact making region, after masking the polysilicon portion, above the area where it is in contact with the base area.

REFERENCES:
patent: 5501991 (1996-03-01), Jang
patent: 5851863 (1998-12-01), Fujii et al.
Wolf, S., Tauber R.N.; Silicon Processing for the VLSI Era vol. 1: Process Technology, Lattice Press, Sunset Beach, CA, p.p. 321-323, Jan. 1986.

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