Method of manufacture TiW alignment mark and implant mask

Details Method of manufacture TiW alignment mark and implant mask Method of manufacture TiW alignment mark and implant mask

1989-05-31

1990-11-06

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 30, 437 39, 437245, 437912, 437924, 148DIG105, H01L 21266, H01L 21388

Patent

active

049686372

ABSTRACT:
A method for defining simultaneously contact implants for source and drain regions and alignment markers for a gate electrode on a channel region includes the steps of providing a refractory metal layer of titanium tungsten over the substrate and patterning the refractory layer to form simultaneously an alignment marker and implant region mask over said substrate. Subsequent to an implant step, the refractory material in all regions of the substrate is removed, except for the portions defining the alignment markers, which are then used to align a masking pattern to provide component electrodes.

REFERENCES:
patent: 4098917 (1978-07-01), Bullock et al.
patent: 4200794 (1980-04-01), Newberry et al.
patent: 4330343 (1982-05-01), Christou et al.
patent: 4442590 (1984-04-01), Stockton et al.
patent: 4782032 (1988-11-01), Geissberger et al.
Wolf, S., et al., Silicon Processing, vol. 1, Lattice Press, 1986, pp. 439-441.

Affiliated with

Also associated with

Rating

Method of manufacture TiW alignment mark and implant mask does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacture TiW alignment mark and implant mask, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacture TiW alignment mark and implant mask will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1306765