Method of manufacture of semiconductor devices

Details Method of manufacture of semiconductor devices Method of manufacture of semiconductor devices

1991-03-12

1992-12-01

Church, Craig E.

X-ray or gamma ray systems or devices

Specific application

Lithography

378210, G21K 500

Patent

active

051685124

ABSTRACT:
A method for the manufacture of semiconductor devices wherein a radiation beam including first and second beams is projected from a synchrotron orbit radiation source into an ambience maintained substantially at a vacuum, includes the steps of directing the radiation beam to a wafer through a window effective to isolate the ambience to thereby print a circuit pattern on an X-ray sensitive layer on the wafer with the first beam, providing a support for supporting the window having an opening, extracting the second beam through the opening, and detecting and correcting any deviation of the first beam with respect to the wafer.

REFERENCES:
patent: 5001734 (1991-03-01), Uda et al.
Physical Review B--vol. 26, No. 8, J. Stohr and R. Jaeger, "Absorption--Edge Resonances Core-Hole Screening . . . ," pp. 4111-4131.

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