Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-10-24
2009-11-10
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S639000, C257SE21577
Reexamination Certificate
active
07615485
ABSTRACT:
A method of manufacturing a semiconductor device including forming two first gate electrodes along a first direction on a first surface of a semiconductor substrate and source/drain areas sandwiching a channel region under each of the first gate electrodes, forming a first interlayer insulating layer to fill a region between the first gate electrodes, lowering a top of the first interlayer insulating layer, depositing a second interlayer insulating layer on the first interlayer insulating layer and the first gate electrodes, planarizing a surface of the second interlayer insulating layer, and forming an interconnect layer in the second interlayer insulating layer and a contact plug in the first interlayer insulating layer and the second interlayer insulating layer so that the contact plug is in contact with the interconnect layer and one of the source/drain areas.
REFERENCES:
patent: 2001/0019142 (2001-09-01), Nakahata et al.
patent: 2002/0098686 (2002-07-01), Kobayashi et al.
patent: 2005/0139904 (2005-06-01), Kamigaichi et al.
patent: 2005/0181542 (2005-08-01), Enquist
patent: 2007/0037379 (2007-02-01), Enquist et al.
patent: 2007/0057316 (2007-03-01), Yaegashi
patent: 9-115903 (1997-05-01), None
patent: 9-162389 (1997-06-01), None
patent: 2000-21985 (2000-01-01), None
patent: 2002-280463 (2002-09-01), None
patent: 2003-243619 (2003-08-01), None
patent: 2004-6433 (2004-01-01), None
patent: 2004-14783 (2004-01-01), None
patent: 2004-356521 (2004-12-01), None
Kutsukake Hiroyuki
Matsunaga Yasuhiko
Miyazaki Shoichi
Fourson George
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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