Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-06-14
2011-06-14
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE23145, C438S618000
Reexamination Certificate
active
07960282
ABSTRACT:
A method of manufacture of an integrated circuit system includes: providing a substrate including an active device; forming a through-silicon-via into the substrate; forming an insulation layer over the through-silicon-via to protect the through-silicon-via; forming a contact to the active device after forming the insulation layer; and removing the insulation layer.
REFERENCES:
patent: 2007/0099414 (2007-05-01), Frohberg et al.
patent: 2009/0001598 (2009-01-01), Chiou et al.
patent: 2009/0111263 (2009-04-01), Chen et al.
patent: 2010/0032811 (2010-02-01), Ding et al.
patent: 2010/0237472 (2010-09-01), Gillis et al.
Hsia Liang-Choo
Lam Jeffrey C.
Lek Chung Meng
Tan Denise
Thiam Thomas
Globalfoundries Singapore Pte. Ltd.
Ishimaru Mikio
Le Thao P.
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