Method of manfacturing semiconductor device

Details Method of manfacturing semiconductor device Method of manfacturing semiconductor device

2007-12-10

2009-10-13

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S690000, C438S692000, C257SE21230, C257SE21214

Reexamination Certificate

active

07601640

ABSTRACT:
A post-CMP cleaning process of a copper layer is to be performed as follows. An alkaline aqueous solution, a polycarboxylic acid, BTA, and an alkaline aqueous solution are sequentially brought into contact with a primary surface of a silicon substrate over which the copper layer is provided.

REFERENCES:
patent: 6436681 (2002-08-01), Schroder et al.
patent: 6821897 (2004-11-01), Schroeder et al.
patent: 7427305 (2008-09-01), Scott et al.
patent: 2002/0037642 (2002-03-01), Wake et al.
patent: 2002-110679 (2002-04-01), None
“Volatile Corrosion Inhibitor (VCI)”, Jul. 1; pp. 1-10, plus English language abstract, Three-Bond Technical News, No. 18., 1975.

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