Method of making wafer level package structure by grinding...

Details Method of making wafer level package structure by grinding... Method of making wafer level package structure by grinding...

2006-10-12

2008-12-23

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Making plural separate devices

C438S127000

Reexamination Certificate

active

07468292

ABSTRACT:
A semiconductor wafer is thinned to a predetermined thickness by grinding the backside thereof (which is opposite to the side where a plurality of devices are formed and metal posts are further formed), and then a metal layer made of metal having a linear thermal expansion coefficient close to that of the semiconductor wafer is formed on the ground side. Further, the semiconductor wafer is sealed with resin, metal bumps are bonded to the tops of the metal posts (barrier metal layer), and then the semiconductor wafer is divided into the respective semiconductor devices. Silicon is used as material for the semiconductor wafer, and tungsten or molybdenum is used as metal constituting the metal layer.

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Chinese Office Action mailed May 11, 2007.
Japanese Office Action mailed Nov. 14, 2006, 2 pages (1 page partial English translation).

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