Method of making V-MOS field effect transistors utilizing a two-

Details Method of making V-MOS field effect transistors utilizing a two- Method of making V-MOS field effect transistors utilizing a two-

1979-09-05

1981-06-09

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

29571, 29578, 29580, 148187, 156647, 156648, 156649, 357 23, 357 55, 357 60, 357 91, H01L 21265, H01L 21306

Patent

active

042723027

ABSTRACT:
A method of making V-MOS field effect transistors is disclosed wherein a masking layer is first formed over a surface of a crystalline substrate. An aperture is then formed in the masking layer to expose the surface of the substrate. An anisotropic etchant is applied to the exposed surface so that a groove having a decreasing width within increasing depth is formed. However, the etch is not allowed to go to completion with the result that a partially formed V-shaped groove is formed. Ions are accelerated through the aperture for implantation in the crystalline substrate in the lower portion of the partially formed V-shaped groove. Thereafter, an anisotropic etchant is reapplied to the partially formed V-shaped groove, and the etch is allowed to go to completion.

REFERENCES:
patent: 3668481 (1972-06-01), Saltich et al.
patent: 3920482 (1975-11-01), Russell
patent: 3975221 (1976-08-01), Rodgers
patent: 3986200 (1976-10-01), Allison
patent: 4003036 (1977-01-01), Jenne
patent: 4003126 (1977-01-01), Holmes et al.
patent: 4049476 (1977-09-01), Horie
patent: 4056413 (1977-11-01), Yoshimura
patent: 4084175 (1978-04-01), Ouyang
patent: 4089021 (1978-05-01), Sato et al.
patent: 4102714 (1978-07-01), DeBar et al.
patent: 4113516 (1978-09-01), Ponczak et al.
patent: 4116720 (1978-09-01), Vinson
patent: 4140558 (1979-02-01), Murphy et al.
patent: 4156289 (1979-05-01), Hoffmann et al.

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