Method of making uniform oxide layer

Details Method of making uniform oxide layer Method of making uniform oxide layer

2007-02-06

2007-02-06

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Passivating of surface

C438S039000, C438S040000, C438S041000, C438S042000, C438S043000, C438S196000, C438S207000, C438S218000, C438S219000, C438S221000, C438S225000, C438S294000, C438S295000, C438S296000, C438S318000, C438S353000, C438S355000, C438S359000, C438S400000

Reexamination Certificate

active

09753011

ABSTRACT:
A method of forming a semiconductor structure includes forming an isolation region in a semiconductor substrate. A first oxide layer is on the substrate, a first sacrificial layer is on the first oxide layer, and a first nitride layer is on the first sacrificial layer. The first oxide layer may be a screen oxide layer, and the method provides consistency in the thickness of the screen oxide layer.

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