Method of making trenches with substantially vertical sidewalls

Details Method of making trenches with substantially vertical sidewalls Method of making trenches with substantially vertical sidewalls

1984-11-09

1986-05-20

Massie, Jerome

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156644, 156653, 156657, 1566611, 156668, 156904, 156646, H01L 21308

Patent

active

045899525

ABSTRACT:
A method of making trenches having substantially vertical sidewalls in a silicon substrate using a three level mask comprising a thick photoresist layer, a silicon nitride layer and a thin photoresist layer. Openings are formed in the thin photoresist layer and silicon nitride layer by reactive ion etching in CF.sub.4. The openings are continued through the thick photoresist by etching in an atmosphere containing oxygen. The exposed surface of the silicon substrate is then etched in a CF.sub.4 atmosphere containing a low concentration of fluorine. Also disclosed is a method of making an electron beam transmission mask wherein the openings are made using the three level mask and reactive ion etching of silicon using the etching technique of the invention.

REFERENCES:
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patent: 4417946 (1983-11-01), Bohlen et al.
patent: 4473435 (1984-09-01), Zafiropoulo et al.
IBM Technical Disclosure Bulletin, vol. 19, No. 9, Feb. 1977, "Ink Jet Nozzles", by C. Chiou et al., p. 3569.
IEEE Transactions on Electron Devices, vol. ED-28, No. 11, 1981, "Linewidth Control in Projection Lithography Using a Multilayer Resist Process", by Michael M. O'Toole et al., pp. 1405-1410.
Solid State Technology/Jun. 1981, "Forefront of Research on Resists", by M. J. Bowden, pp. 73-87.
J. Vac. Sci. Technol., vol. 13, No. 5, Sep./Oct. 1976, "Dry Process Technology (reactive ion etching)", by James A. Bondur, pp. 1023-1029.

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