Method of making transistor gates with controlled work function

Details Method of making transistor gates with controlled work function Method of making transistor gates with controlled work function

2011-01-18

2011-01-18

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

C257S407000, C438S104000, C438S142000, C438S149000, C438S151000, C438S157000, C438S197000, C438S199000

Reexamination Certificate

active

07871943

ABSTRACT:
Embodiments of the invention provide methods for making an integrated circuit comprising providing a substrate, forming a structured layer stack on the substrate comprising a dielectric layer located on the substrate and an oxide-free metallic layer located on the dielectric layer, wherein the metallic layer comprising a transition metal. The method further comprises oxidizing the metallic layer, thereby increasing a work function of the metallic layer. Moreover, a substrate for making an integrated circuit is described.

REFERENCES:
patent: 6458695 (2002-10-01), Lin et al.
patent: 7045406 (2006-05-01), Huotari et al.
patent: 2005/0095852 (2005-05-01), Saenger et al.
patent: 2005/0110098 (2005-05-01), Yoshihara
patent: 2006/0006522 (2006-01-01), Doczy et al.
patent: 2006/0051924 (2006-03-01), Doczy et al.
patent: 2007/0018259 (2007-01-01), Ko et al.
patent: 2008/0001202 (2008-01-01), Schaeffer et al.
Liu et al, “Preparation of Nano-Sized Amorphous Molybdenum Dioxide Powders by Use of Gamma-Ray Radiation Method”, 1996, Materials Research Bulletin, vol. 31, No. 8, pp. 1029-1033.
Venkataraj et al, “Multi-technique Characterization of Tantalum Oxynitride Films Prepared by Reactive Direct Current Magnetron Sputtering”, 2005, Thin Solid Films, vol. 514, pp. 1-9.
D.C. Gilmer et al., “LASER Anneal to Enable Ultimate CMOS Scaling with PMOS Band Edge Metal Gate/High-K Stacks”, 2006 Solid-State Device Research Conference, Proceeding of the 36th European ESSDERC 2006, IEEE, Sep. 2006, pp. 351-354.

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