Method of making three dimensional semiconductor devices in sele

Details Method of making three dimensional semiconductor devices in sele Method of making three dimensional semiconductor devices in sele

1983-12-19

1986-09-02

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 29576T, 148187, 427 531, 357 91, H01L 21265, H01L 2126

Patent

active

046094075

ABSTRACT:
Herein disclosed is a semiconductor device having at least one lower resistance region formed in the single-crystalline semiconductor film which is so formed to continuously coat both a single-crystalline semiconductor substrate and an insulating film formed on the surface of the substrate.
Since the aforementioned single-crystalline semiconductor film is used, many advantages which are not attained from the semiconductor device according to the prior art can be obtained.
The aforementioned single-crystalline semiconductor film is formed by irradiating a polycrystalline or amorphous semiconductor film with a laser beam.

REFERENCES:
patent: 4269631 (1981-05-01), Anantha et al.
patent: 4292091 (1981-09-01), Togei
patent: 4319954 (1982-03-01), White et al.
patent: 4375993 (1983-03-01), Mori et al.
patent: 4377031 (1983-03-01), Goto et al.
patent: 4377902 (1983-03-01), Shinada et al.
patent: 4381201 (1983-04-01), Sakurai
patent: 4409724 (1983-10-01), Tasch et al.
Tamura et al., Jap. Jour. Appl. Phys. 19 (1980) p. L-23.
Anantha et al., IBM-TDB, 22 (1979) 575.
Baeri et al., J. Appl. Phys. 50 (Feb. 1979), p. 788.
Gibbons et al., Appl. Phys. Letts. 34 (Jun. 1979) 831.
Bean et al., Appl. Phys. Letts. 33 (Aug. 1978) 227.

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