Method of making thin film transistors including recrystallizati

Details Method of making thin film transistors including recrystallizati Method of making thin film transistors including recrystallizati

1992-08-19

1994-06-21

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 41, 437101, 437239, H01L 21265, H01L 21335

Patent

active

053228073

ABSTRACT:
A thin film transistor is formed by depositing amorphous silicon and forming a gate structure and then using a high-pressure oxidation to form a high-quality gate oxide that has a layered structure.

REFERENCES:
patent: 3974515 (1976-08-01), Ipri et al.
patent: 4675978 (1987-06-01), Swartz
patent: 5112764 (1992-05-01), Mitra et al.
patent: 5198379 (1993-03-01), Adar
1989 IEEE Transactions on Electron Devices, vol. 36, No. 2, "High Performance Low-Temperature Poly-Si n-Channel TFT's for LCD," by Akio Mimura, et al., Feb. 1989, pp. 351-359.
Japanese Journal of Applied Physics, vol. 30, No. 18, "Leakage Current Reduction of Poly-Si Thin Film Transistors by Two-Step Annealing," by Takashi Aoyama, et al., Jan. 1991, pp. L84-L87.
IEEE Transactions on Electron Devices, vol. ED-33, No. 4, "Polycrystalline-Silicon Device Technology for Large-Area Electronics", by William G. Hawkins, Apr. 1986, pp. 477-481.

Affiliated with

Also associated with

Rating

Method of making thin film transistors including recrystallizati does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making thin film transistors including recrystallizati, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making thin film transistors including recrystallizati will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2220520