Method of making the selection gate in a split-gate flash...

Details Method of making the selection gate in a split-gate flash... Method of making the selection gate in a split-gate flash...

2006-01-03

2006-01-03

Chen, Jack (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

06982458

ABSTRACT:
A method of making the selection gate in a split-gate flash EEPROM cell forms a selection gate on a trench sidewall of a semiconductor substrate to minimize the sidewise dimension of the selection gate and to maintain the channel length. The disclosed method includes the steps of: forming a trench on a semiconductor substrate on one side of a suspending gate structure; forming an inter polysilicon dielectric layer on the sidewall of the suspending gate structure and the trench; and forming a polysilicon spacer on the inter polysilicon dielectric layer as the selection gate. Such a split-gate flash EEPROM cell can produce ballistic hot electrons, improving the data writing efficiency and lowering the writing voltage.

REFERENCES:
patent: 5284784 (1994-02-01), Manley
patent: 5312781 (1994-05-01), Gregor et al.
patent: 5998263 (1999-12-01), Sekariapuram et al.
patent: 6133098 (2000-10-01), Ogura et al.
patent: 6531347 (2003-03-01), Huster et al.
patent: 6593187 (2003-07-01), Hsieh
patent: 6768162 (2004-07-01), Chang et al.
patent: 2002/0011608 (2002-01-01), Lee
patent: 2003/0139010 (2003-07-01), Wang
patent: 335395 (1989-10-01), None

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