Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making named article
Patent
1995-02-24
1997-08-19
McPherson, John A.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making named article
216 2, 216 11, 427249, 427255, C23C 2600
Patent
active
056587104
ABSTRACT:
The forming of superhard, durable and inert mechanical microstructures, such as tips for atomic force microscopy and field emission, membranes, hinges, actuators, and sensors requires micromachining of silicon or polysilicon. The microstructures are then reacted with a hydrocarbon or ammonia gas, at a temperature in the range of 700.degree. C. to 1100.degree. C. and in partial vacuum conditions for several minutes. Gases such as methane, ethane, or acetylene will convert the surface layers to SiC, which is useful for its conductive properties, while ammonia gas will convert the surface layers to Si.sub.3 N.sub.4, which is useful for its insulative properties. Thus, the converted material will have improved physical, mechanical, chemical and electrical properties.
REFERENCES:
patent: 4123571 (1978-10-01), Balog et al.
patent: 4968585 (1990-11-01), Albrecht et al.
patent: 4968641 (1990-11-01), Kalnitsky et al.
patent: 5032545 (1991-07-01), Doan et al.
patent: 5179499 (1993-01-01), MacDonald et al.
patent: 5201992 (1993-04-01), Marcus et al.
patent: 5332697 (1994-07-01), Smith et al.
Gary Stix, "Micron Machinations", Scientific American, Nov. 1992 pp. 106-117.
J. Graul and E. Wagner, "Growth mechanism of polycrystalline .beta.-SiC layers on silicon substrate", Applied Physics Letters 56, vol. 21, No. 2, pp. 67 (1972).
C.J. Mogab and H.J. Leamy, "Conversion of Si to epitaxial SiC by reaction with C.sub.2 H.sub.2 ", Applied Physics Letters, vol. 45, No. 3, p. 1075 (1974).
J. Liu et al., "Modification of Si field emitter surfaces by chemical conversion to SiC", J.Vac.Sci.Technol.B, vol. 12, No. 2 Mar./Apr. 1994.
R. B. Marcus et al., "Formation of silicon tips with < 1 nm radius", Appl. Phys. Lett., vol. 56, No. 3, pp. 236-238 (15 Jan. 1990).
Adagio Associates, Inc.
McPherson John A.
Schreiber Donald E.
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