Method of making structures with dimensions in the sub-micromete

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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29576W, 29580, 156646, 156648, 156653, 156655, 156657, 1566591, 156662, 156668, 204192EC, 204192E, 357 49, 427 93, H01L 21306, B44C 122, C03C 1500, B29C 1708

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045029148

ABSTRACT:
Following the method of making structures with dimensions in the submicrometer range, structures of a polymeric layer with horizontal and substantially vertical surfaces are first made on a substrate. Thereupon, a silicon nitride or oxide layer is plasma deposited. This layer is subjected to reactive ion etching methods in such a manner that its horizontal regions and the polymeric structures are removed, with merely the narrow regions of the silicon nitride or oxide layer that had originally been arranged adjacent the vertical surfaces of the polymeric structures remaining. In the case of positive lithography, the silicon nitride or oxide walls are converted into a mask with the same dimensions but consisting of a different mask material. In the case of negative lithography the silicon nitride or oxide walls are converted in a mask reversal process into openings in a mask material layer through which by means of reactive ion etching vertical trenches approximately 0.5 .mu.m deep can be etched in the silicon substrate. The trenches are filled by thermal oxidation or with a synthetic material as e.g. polyimide. The method as disclosed by the invention can also be applied to other processes than recessed isolation in semiconductor technology.

REFERENCES:
patent: 4042726 (1977-08-01), Kagi et al.
patent: 4313782 (1982-02-01), Sokoloski
patent: 4331708 (1982-05-01), Hunter
patent: 4334348 (1982-06-01), Frenary et al.
patent: 4354896 (1982-10-01), Hunter et al.
patent: 4454014 (1984-06-01), Bischoff

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