Method of making stacked chip package

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...

Reexamination Certificate

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C438S109000, C257S777000

Reexamination Certificate

active

06258626

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
This invention relates to a method of making a stacked chip package, and more specifically to a method of packaging semiconductor chips on a substrate in a stacking arrangement.
2. Description of the Related Art
U.S. Pat. No. 5,973,403, issued Oct. 26, 1999, discloses a conventional stacked chip package
100
(see
FIG. 1
) comprising a first semiconductor chip being flip-chip bonded to a substrate
120
, and a second semiconductor chip being back-side attached to the first chip
110
and then wire-bonded to the substrate
120
. The upper surface of the substrate
120
is provided with a plurality of wire-bondable pads
122
and a plurality of flip-chip pads
124
. The lower surface of the substrate
120
is provided with a plurality of solder pads
126
. The first chip
110
is attached to the flip-chip pads
124
of the substrate
120
through a plurality of solder joints
112
. The second chip
130
is connected to the wire-bondable pads
122
on the substrate
120
through a plurality of bonding wires
132
. Typically, an underfill
114
is formed between the chip
110
and the substrate
120
for sealing the gap between the solder joints
112
. The second chip
130
is attached onto the backside surface of the first chip
110
through an adhesive layer
134
. Typically, the adhesive layer
134
is made of thermosetting epoxy material.
Referring to
FIG. 2
, in mass production of the stacked chip package
100
, it is desirable to integrally form a plurality of substrates in a substrate strip having alignment holes (not shown) so that the packaging process can be automated. Normally, the semiconductor chip is formed of microcrystalline silicon with a coefficient of thermal expansion (CTE) of 3-5 ppm° C.
−1
. The substrate strip is usually formed of polymer impregnated fiberglass having a coefficient of thermal expansion of 25-40 ppm° C.
−1
and the thickness of the substrate strip is less than 0.36 mm. Since there is a significant difference between the semiconductor chip
110
and the substrate strip in CTE and the substrate strip is rather thin, the semiconductor chip
110
and the substrate strip expand and contract in different amounts along with temperature fluctuations during the curing process of the underfill
114
thereby causing the semiconductor chip
110
and the substrate strip to warp. The curing process of the underfill
114
typically comprises 30 minutes of precure at 120° C. and three hours of postcure at 150° C. The higher curing temperature and longer curing time are employed, the greater warpage the semiconductor chip
110
and the substrate strip will produce. As the underfill
114
cures and shrinks, a bending moment can be applied to the chip
110
, since it is securely attached to the substrate strip. This bending moment, if severe enough, can fracture the chip
110
.
Referring to
FIG. 2
, the warped substrate strip and semiconductor chip
110
will result in adverse influences on the chip
110
itself and the subsequent manufacturing process. For example, the warped substrate strip and semiconductor chip
110
may bring about positioning errors during dispensing the adhesive layer
134
, such that the epoxy adhesive can not be dispensed in precise amounts and to correct positions on the chip
110
. This may cause the bonding layer on the chip
110
formed from the epoxy adhesive to have incomplete filling problem thereby adversely affecting the bonding quality between the chip
110
and chip
130
.
Curing temperature of the underfill
114
and the adhesive layer
134
depends on the materials used in the underfill
114
and the adhesive layer
134
; typically, it is higher than the maximum exothermic temperature of the underfill
114
and the adhesive layer
134
. The maximum exothermic temperature of the underfill
114
and the adhesive layer
134
can be calculated from the heat of cure curve for the underfill
114
and the adhesive layer
134
detected by Differential Scanning Calorimeter (DSC).
U.S. Pat. No. 5,973,403 also discloses a method of making the stacked chip package
100
. However, this method does not teach how to overcome the warpage problems described above. The present invention therefore seeks to provide a method of making the stacked chip package that overcomes, or at least reduces the above-mentioned problems of the prior art.
SUMMARY OF THE INVENTION
It is an object of the present invention to provide a method of making a stacked chip package wherein the curing process and materials of adhesive layers are optimized to minimize the warpage of the substrate strip and the lower chip before mounting of the upper chip.
The method of making a stacked chip package according to a first preferred embodiment of the present invention comprises the steps of: (a) providing a first chip having a plurality of solder bumps on the active surface thereof and placing the first chip onto a substrate in a manner that solder bumps of the first chip are aligned with corresponding flip-chip pads formed on a surface of the substrate; (b) reflowing the solder bumps so as to mechanically and electrically attach the first chip to the substrate; (c) attaching a second chip to the first chip through an adhesive layer with the backside surface of the second chip facing the backside surface of the first chip; (d) curing the adhesive layer; (e) forming an underfill between the first chip and the substrate; (f) curing the underfill; (g) electrically coupling the second chip to corresponding wire-bondable pads formed on the surface of the substrate; and (h) encapsulating the first chip and the second chip against a portion of the surface of the substrate. It is noted that the adhesive layer is cured in step (d) before underfilling such that the adhesive layer can act as a protection layer on the backside surface of the first chip during curing of the underfill. Therefore, the cured adhesive layer can help the first chip to resist stresses created during curing process of the underfill, thereby reducing the problem of die cracking.
The method of making a stacked chip package according to a second preferred embodiment of the present invention comprises the steps of: (a′) placing the first chip onto a substrate in a manner that solder bumps of the first chip are aligned with corresponding flip-chip pads formed on a surface of the substrate; (b′) reflowing the solder bumps so as to mechanically and electrically attach the first chip to the substrate; (c′) forming an underfill between the first chip and the substrate; (d′) partially curing the underfill such that it gels but does not harden; (e′) attaching the second chip to the first chip through an adhesive layer; (f′) curing the adhesive layer and the underfill between the first chip and the substrate; (g′) electrically coupling the second chip to the wire-bondable pads; and (h′) encapsulating the first chip and the second chip against a portion of the upper surface of the substrate. During the step (d′), the underfill is heated to a temperature at which it gels but does not harden (the gelling temperature and time are material dependent). Thus, the heating temperature and time for the first chip and the substrate are reduced such that the first chip and the substrate dose not experience much thermal stress during the step (d′). Therefore, the resulting warpage of the first chip and the substrate is minimized thereby assuring the proceeding of subsequent processes such as the dispensing of the adhesive layer during step (e′).


REFERENCES:
patent: 5422435 (1995-06-01), Takiar et al.
patent: 5923090 (1999-07-01), Fallon et al.
patent: 5973403 (1999-10-01), Wark
patent: 6098278 (2000-08-01), Vindasius et al.
patent: 6191483 (2001-02-01), Loo
Dufresne et al., “Hybrid assembly technology for flip-chip-on-chip (FCOC) PBGA laminate assembly”, Proc. 50th Electronic Components & Tech. Conf., May 2000, 541-548.*
Baliga, “Packaging Provides Viable Alternative to SOC”, Semiconductor Internati

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