Method of making SOI structure

Details Method of making SOI structure Method of making SOI structure

1995-01-05

1998-09-08

Niebling, John

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

438406, H01L 2176

Patent

active

058044957

ABSTRACT:
A silicon wafer for the volume production of integrated circuit devices has a lattice network of chip separating structure containing a plurality of rectangular-shaped cavities which is filled completely with silicon single crystals to form single crystal layer sections of the same height as the depth of the lattice network. Both the cavities and the single crystal layer sections are dimensioned to suit the planar dimensions of an integrated circuit device chip to be used for volume production.

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Journal of the Electrochemical Society (1986) Aug., No. 8, Manchester, NH, USA, A Field-Assisted Bonding Process for Silicon Dielectric Isolation, pp. 1673-1677.
English abstracts of Japanese Appln. No. 59-057450 filed Apr. 1984; Japanese Appln. No. 59-080940 filed May 1984; Japanese Appln. No. 59-104139 filed Jun. 1984; Japanese Appln. No. 61-090443 filed May 1986.

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