Method of making small transistor lengths

Details Method of making small transistor lengths Method of making small transistor lengths

2005-07-05

2005-07-05

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S713000, C438S717000

Reexamination Certificate

active

06914009

ABSTRACT:
Transistor gate linewidths can be made to be effectively smaller by etching a notch at the bottom of the gate to reduce the effective linewidth. This can be done by etching at a layer interface, such as a silicon-germanium interface in an over-etch step.

REFERENCES:
patent: 3977925 (1976-08-01), Schwabe
patent: 5155657 (1992-10-01), Oehrlein et al.
100nm Gate Length High Performance/Low Power CMOS Transistor Structure, T. Ghani et al, IEEE 1999, 4pp, Re-print No. 0-7803-5413-3/99.

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