Method of making single-crystal mercury cadmium telluride layers

Details Method of making single-crystal mercury cadmium telluride layers Method of making single-crystal mercury cadmium telluride layers

1988-10-05

1990-03-06

Andrews, Melvyn J.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156624, 156DIG72, 437120, H01L 21368

Patent

active

049063251

ABSTRACT:
A method of making symmetrical mercury cadmium telluride layers by epitaxial growth on a cadmium telluride substrate, performed inside a reactor with two communicating zones, kept at different and controlled temperatures. Growth solution is directly prepared inside the reactor by submitting to a specific thermal cycle a weighed tellurium quantity, a saturating cadmium telluride substrate and a mercury bath.

REFERENCES:
patent: 4642142 (1987-02-01), Harman

Affiliated with

Also associated with

Rating

Method of making single-crystal mercury cadmium telluride layers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making single-crystal mercury cadmium telluride layers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making single-crystal mercury cadmium telluride layers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-45476