Method of making silicon quantum wires

Details Method of making silicon quantum wires Method of making silicon quantum wires

1993-07-26

1994-10-25

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156662, 437225, 2041291, H01L 2100

Patent

active

053586000

ABSTRACT:
A method of making semiconductor quantum wires employs a semiconductor wafer (14) as starting material. The wafer (14) is weakly doped p type with a shallow heavily doped p layer therein for current flow uniformity purposes. The wafer (14) is anodised in 20% aqueous hydrofluoric acid to produce a layer (5) microns thick with 70% porosity and good crystallinity. The layer is subsequently etched in concentrated hydrofluoric acid, which provides a slow etch rate. The etch increase porosity to a level in the region of 80% or above. At such a level, pores overlap and isolated quantum wires are expected to from with diameter less than or equal to 3 nm. The etched layer exhibits photoluminescence emission at photon energies well above the silicon bandgap (1.1 eV) and extending into the red region (1.6-2.0 eV) of the visible spectrum.

REFERENCES:
patent: 4987094 (1991-01-01), Colas et al.

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